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FF225R65T3E3
  • FF225R65T3E3

FF225R65T3E3

Active and preferred

XHP™ 3 6500 V, 225 A half-bridge IGBT module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode.

Infineon Technologies FF225R65T3E3 Product Info

16 April 2026 0

Parameters

Configuration

half-bridge

Dimensions (width)

99.8 mm

Dimensions (length)

140 mm

Features

10.4 kV isolation, Phase leg

Housing

XHP™ 3

IC(nom) / IF(nom)

225 A

IC max

225 A

Qualification

Industrial

Technology

IGBT3 - E3

VCE(sat) (Tvj=25°C typ)

3 V

VCES / VRRM

6500 V

VF (Tvj=25°C typ)

3.1 V

Voltage Class max

6500 V

Apps

Traction

Features

  • High DC stability
  • Low VCEsat
  • Extended storage temperature
  • * down to T(stg) = -55°C
  • Package with CTI > 600
  • Package insulation 10.4 kV AC 1min
  • Tvj op=150°C
  • AlSiC base plate
  • Increased TC capability
  • Fire & smoke EN45545 R22, R23 : HL3
  • Modular concept
  • Halfbridge configuration

Description

  • Standardized housing: 100x140x40 mm
  • decades of field experience
  • Long service life
  • Enables clean electrical design
  • Enables clean mechanical design
  • Scalability in smaller steps
  • One type for various power levels
  • Smoother supply chain handling
  • Enables downsizing on system level
  • less EMI issues

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