Product
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IMW120R007M1H
  • IMW120R007M1H

IMW120R007M1H

CoolSiC™ MOSFET discrete 1200 V, 7 mΩ G1 in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Infineon Technologies IMW120R007M1H Product Info

16 April 2026 0

Parameters

Ciss

9170 pF

Coss

420 pF

ID (@25°C) max

225 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-247-3

Pin Count

3 Pins

Polarity

N

Ptot (@ TA=25°C) max

750 W

Qgd

64 nC

QG

220 nC

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

7 mΩ

RthJA max

62 K/W

RthJC max

0.2 K/W

Technology

CoolSiC™ G1

Tj max

175 °C

VDS max

1200 V

Apps

EV traction inverter, Battery formation and testing, EV charging, Photovoltaic, Motor control, Uninterruptible power supplies (UPS)

Features

  • Best in class switching losses
  • Best in class conduction losses
  • Benchmark gate threshold voltage
  • Vth > 4 V
  • 0V turn-off gate voltage applicable
  • Wide gate-source voltage range
  • Robust diode for hard commutation
  • Temp. ind. turnoff switching losses
  • .XT interconnection technology

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