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IMT65R030M1H
  • IMT65R030M1H

IMT65R030M1H

CoolSIC™ MOSFET 650 V, 30 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 30 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for numerous designs. The reduction of thermal impedance compared to D²PAK, together with the innovative .XT interconnect, makes the 30 mΩ product suitable for high power designs. It ideally fits the emerging Totem Pole PFC topology in high power systems, as well as high power DC-DC or AC-DC stages, with demanding power density targets.

Infineon Technologies IMT65R030M1H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

142 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

TOLL

Polarity

N

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

42 mΩ

RDS (on) (@ Tj = 25°C)

30 mΩ

Technology

CoolSiC™ G1

VDS max

650 V

Apps

Medium voltage IBC (48 V), DIN rail power supply solutions

Features

  • 1st generation CoolSiC™
  • low gate charge
  • low stored energy in COSS
  • negligable Qrr
  • flat COSS
  • flat RDS(on) over temperature

Description

  • higher efficiency in hard switching
  • higher efficiency in soft switching
  • hard commutation on body diode
  • high reliability
  • Kelvin source
  • Kelvin source

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