IMLT65R026M2H

Active and preferred

The CoolSiC™ MOSFET discrete 650 V Generation 2 (G2) in TOLT leverages the G2 best-in-class switching performance while enabling all the benefits of top-side cooling. Complementing the Q-DPAK package, already available with CoolSiC™ and CoolMOS™, it is now possible to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.

Infineon Technologies IMLT65R026M2H Product Info

16 April 2026 0

Parameters

ID (@25°C) max	82 A
Mounting	SMT
Operating Temperature range	-55 °C to 175 °C
Package	TOLT
Polarity	N
Qualification	Industrial
RDS (on) (@ Tj = 25°C) max	34 mΩ
RDS (on) (@ Tj = 25°C)	26 mΩ
Technology	CoolSiC™ G2
VDS max	650 V

Apps

Battery energy storage (BESS), EV charging, Solid-state circuit breaker (SSCB), 1-phase string inverter solutions, Microinverter solutions, Power conversion

Features

Excellent figures of merit (FOMs)
High robustness and overall quality
Flexible driving voltage range
Support for unipolar driving (VGS_off=0)
Lower thermal resistance
Improved package interconnect with .XT
Top-side cooling package

Description

Enables BOM savings
Maximizes the system performance per $
Highest reliability
Enables top efficiency and power density
Simplifies assembly and cooling
Liquid cooling "ready"
Allows designs without fan or heatsink
Lower stray inductances
Better gate control

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IMLT65R026M2H

Infineon Technologies IMLT65R026M2H Product Info

Parameters

Apps

Features

Description

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS All In One Distributor

IMLT65R026M2H

Infineon Technologies IMLT65R026M2H Product Info

Parameters

Apps

Features

Description

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS
All In One Distributor