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AIMBG120R040M1
  • AIMBG120R040M1

AIMBG120R040M1

Active and preferred

With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Infineon Technologies AIMBG120R040M1 Product Info

16 April 2026 0

Parameters

Ciss

1264 pF

Coss

63 pF

ID (@25°C) max

54 A

Launch year

2023

Operating Temperature range

-55 °C to 175 °C

Package

TO-263-7

Planned to be available until at least

2033

Polarity

N

Ptot (@ TA=25°C) max

268 W

QG

43 nC

Qualification

Automotive

RDS (on) (@ Tj = 25°C)

40 mΩ

RthJC max

0.56 K/W

Technology

CoolSiC™ G1

VDS max

1200 V

VGSS, off

0

VGSS, on

20

Apps

DC-DC converter high-voltage, On-board charging (OBC), 1-phase string inverter solutions

Features

  • Wide input voltage range 3.0 - 17 V
  • Fast COT with no ext compensation
  • Support FCCM & DEM
  • Pin programmable Vout, Fsw
  • PMBUS interface for reporting
  • 5 mm x 6 mm PQFN
  • Pb-free, ROHS2 compliant with ex. 7a

Description

  • Superior transient response
  • Accurate output voltage regulation
  • High efficiency and high power density
  • Fast constant on-time PWM engine

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