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IMDQ65R010M2H
  • IMDQ65R010M2H

IMDQ65R010M2H

Active and preferred

The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.

Infineon Technologies IMDQ65R010M2H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

154 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

Q-DPAK

Polarity

N

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

13 mΩ

RDS (on) (@ Tj = 25°C)

10 mΩ

RthJC max

0.23 K/W

Technology

CoolSiC™ G2

VDS max

650 V

Apps

Battery energy storage (BESS), EV charging, Solid-state circuit breaker (SSCB), 1-phase string inverter solutions, Power conversion

Features

  • Excellent figures-of-merit (FOMs)
  • High robustness and overall quality
  • Flexible driving voltage range
  • Support for unipolar driving (VGS,off=0)
  • Lower thermal resistance
  • Improved package interconnect with .XT
  • Top-side cooling

Description

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability
  • Enables top efficiency and power density
  • Simplifies assembly and cooling
  • Water cooling "ready"
  • Allows designs without fan or heatsink
  • Lower stray inductances
  • Better gate control

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