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IMBG75R060M2H
  • IMBG75R060M2H

IMBG75R060M2H

Active and preferred

The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon.  It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.

Infineon Technologies IMBG75R060M2H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

29 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK 7-pin

Polarity

N

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

78 mΩ

RDS (on) (@ Tj = 25°C)

60 mΩ

RthJC max

1.29 K/W

Technology

CoolSiC™ G2

VDS max

750 V

Apps

Server power supply units (PSU), AC-DC power conversion for telecommunications infrastructure, Battery formation and testing, Battery energy storage (BESS), EV charging, Solid-state circuit breaker (SSCB), Photovoltaic

Features

  • Highly robust 750 V technology
  • Best-in-class RDS(on) x Qfr
  • Excellent Ron x Qoss and Ron x QG
  • Low Crss/Ciss together and high Vgsth
  • 100% avalanche tested 
  • Infineon die attach technology 
  • Cutting-edge top-side-cooled package

Description

  • Superior efficiency in hard switching
  • Enables higher switching frequency
  • Higher reliability
  • Withstand bus voltages beyond 500 V
  • Robustness against parasitic turn
  • Unipolar driving
  • Best-in-class thermal dissipation

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