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IDW40G120C5B
  • IDW40G120C5B

IDW40G120C5B

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The CoolSiC™ Schottky diode generation 5 1200 V, 40 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Infineon Technologies IDW40G120C5B Product Info

16 April 2026 0

Parameters

I(FSM) max

290 A

IF max

40 A

IR

23 µA

Package

PG-TO247-3

Ptot max

402 W

QC

202 nC

Qualification

Industrial

RthJC

0.3 K/W

VF

1.4 V

Apps

Battery energy storage (BESS), EV charging, Hydrogen electrolysis, Photovoltaic, Motor control, Uninterruptible power supplies (UPS)

Features

  • Best-in-class forward voltage (VF)
  • No reverse recovery charge
  • Mild positive temp. depend. of VF
  • Best-in-class surge current capab.
  • Excellent thermal performance

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