IDW30G120C5B

Active and preferred

The CoolSiC™ Schottky diode generation 5 1200 V, 30 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Infineon Technologies IDW30G120C5B Product Info

16 April 2026 0

Parameters

I(FSM) max	240 A
IF max	30 A
IR	17 µA
Package	PG-TO247-3
Ptot max	332 W
QC	154 nC
Qualification	Industrial
RthJC	0.35 K/W
VF	1.4 V

Apps

Battery energy storage (BESS), General purpose motor drive, Hydrogen electrolysis, Photovoltaic, 1-phase string inverter solutions, Home and building automation, Motor control, Uninterruptible power supplies (UPS)

Features

Best-in-class forward voltage (V_F)
No reverse recovery charge
Mild positive temp. depend. of V_F
Best-in-class surge current capab.
Excellent thermal performance

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IDW30G120C5B

Infineon Technologies IDW30G120C5B Product Info

Parameters

Apps

Features

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS All In One Distributor

IDW30G120C5B

Infineon Technologies IDW30G120C5B Product Info

Parameters

Apps

Features

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS
All In One Distributor