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IDK09G65C5
  • IDK09G65C5

IDK09G65C5

Infineon's CoolSiC™ 650V Schottky Diodes deliver high price-performance ratio, leveraging advanced silicon carbide production facilities, a solid track record, utmost quality, and a very granular product portfolio. The latest product family of CoolSiC™ Schottky diodes G6, comes with improved system efficiency through reduced forward voltage, complementing Infineon’s 600 V and 650 V CoolMOS™ 7 superjunction MOSFET families.

Infineon Technologies IDK09G65C5 Product Info

16 April 2026 0

Parameters

I(FSM) max

75 A

IF max

9 A

IR

0.45 µA

Package

D2PAK

Ptot max

82 W

QC

14 nC

Qualification

Industrial

RthJC

1.1 K/W

VF

1.5 V

Features

  • Improved figure of merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating

Description

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

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