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IDH08G65C6
  • IDH08G65C6

IDH08G65C6

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F).

Infineon Technologies IDH08G65C6 Product Info

16 April 2026 0

Parameters

I(FSM) max

47 A

IF max

8 A

IR

0.8 µA

Package

TO220

Ptot max

63 W

QC

12.2 nC

Qualification

Industrial

RthJC

1.4 K/W

VF

1.25 V

Apps

Medium voltage IBC (48 V), Light electric vehicle solutions, Battery energy storage (BESS), EV charging, DIN rail power supply solutions

Features

  • The lowest V F: 1.25V
  • Best-in-class figure of merit (Q c x V F)
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High dv/dt ruggedness
  • Optimized thermal behavior

Description

  • Improved system efficiency over all load conditions
  • Increased system power density
  • Reduced cooling requirements and increased system reliability
  • Enables extremely fast switching
  • Easy and effective match with CoolMOS™ 7 families
  • Optimal price performance

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