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BAT15-099
  • BAT15-099

BAT15-099

Active and preferred

This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099 a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Infineon Technologies BAT15-099 Product Info

16 April 2026 0

Parameters

C @VR=0V

0.29 pF

Configuration

Anti-parallel pair

IF max

110 mA

VF max

0.32 V

VF

0.25 V

VR max

4 V

Apps

Consumer electronics

Features

  • Low inductance Ls = 2 nH (typical)
  • Low capacitance C = 0.29 pF (typical) at 1 MHz
  • Industry standard SOT143 package (2.9 mm x 2.4 mm x 1 mm)
  • Pb-free (RoHS compliant) and halogen-free

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