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IDH04G65C6
  • IDH04G65C6

IDH04G65C6

The CoolSiC™ Schottky diode 650 V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F).

Infineon Technologies IDH04G65C6 Product Info

16 April 2026 0

Parameters

I(FSM) max

29 A

IF max

4 A

IR

0.4 µA

Package

TO220

Ptot max

45 W

QC

6.9 nC

Qualification

Industrial

RthJC

2 K/W

VF

1.25 V

Apps

Medium voltage IBC (48 V), Health and lifestyle, General purpose motor drive, Uninterruptible power supplies (UPS)

Features

  • The lowest V F: 1.25V
  • Best-in-class figure of merit (Q c x V F)
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High dv/dt ruggedness
  • Optimized thermal behavior

Description

  • Improved system efficiency over all load conditions
  • Increased system power density
  • Reduced cooling requirements and increased system reliability
  • Enables extremely fast switching
  • Easy and effective match with CoolMOS™ 7 families
  • Optimal price performance

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