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IDC51D120T8H
  • IDC51D120T8H

IDC51D120T8H

Active

Fast switching emitter controlled diode for medium / high power modules.

Infineon Technologies IDC51D120T8H Product Info

16 April 2026 0

Parameters

I(FSM) max

200 A

IF max

100 A

IR max

18 µA

Technology

Emitter Controlled Diode 4 High Power

VDS max

1200 V

VF

1.9 V

Features

  • 1200V Emitter Controlled 4 technology 120µm chip
  • 110 µm chip
  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient

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