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IAUZ30N08S5N186
  • IAUZ30N08S5N186

IAUZ30N08S5N186

Active and preferred

The IAUZ30N08S5N186 is a 18.6mR 80V MOSFET in a 3x3 mm² S3O8 package, using Infineon's leading OptiMOS™ 5 technology. Next to others it is used in pumps, battery management systems as well as ADAS applications.

Infineon Technologies IAUZ30N08S5N186 Product Info

16 April 2026 1

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

30 A

Launch year

2021

Operating Temperature range

-55 °C to 175 °C

Package

PG-TSDSON-8

Planned to be available until at least

2038

Polarity

N

QG (typ @10V)

9.3 nC

QG (typ @10V) max

12.1 nC

Qualification

Automotive

RDS (on) (@10V) max

18.6 mΩ

Technology

OptiMOS™5

VDS max

80 V

VGS(th) range

2.2 V to 3.8 V

VGS(th)

3 V

Apps

Automotive secondary power distribution unit, Automotive body control module (BCM)

Features

  • OptiMOS™ 5 power MOSFET
  • N-channel-Enhancement mode-Normal Level
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

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