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IAUTN15S6N038G
  • IAUTN15S6N038G

IAUTN15S6N038G

Active and preferred

IAUTN15S6N038G is built with Infineon’s leading-edge, power semiconductor technology OptiMOS™ 6 150V. It is offered in our versatile, robust, high current TOLG 10x12 mm² SMD package and designed for high performance, high quality and robustness needed for demanding automotive applications. Key characteristics include RoHS compliance, MSL1 rating, automotive quality beyond AEC-Q101, PPAP capability, and delivery in tape and reel format.

Infineon Technologies IAUTN15S6N038G Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany

ID (@25°C) max

170 A

IDpuls max

601 A

Launch year

2025

Operating Temperature range

-55 °C to 175 °C

Package

TOLG (PG-HSOG-8-1)

Polarity

N

QG (typ @10V) max

88 nC

QG (typ @10V)

67 nC

Qualification

Automotive

RDS (on) (@10V) max

3.8 mΩ

RthJC

0.57 K/W

Technology

OptiMOS™6

VDS max

150 V

VGS(th) range

3 V to 4 V

VGS(th)

3.5 V

Apps

BMS (electric two- & three-wheelers), Traction inverter (electric two- & three-wheelers), DC-DC converter high-voltage, DC-DC converter high-voltage (commercial vehicles), On-board charging (OBC)

Features

  • Breakdown voltage of 150V
  • Low RDS(on) → lowest conduction losses
  • N-ch.-Enhancement mode-Normal Level
  • Tight distribution of VGS(th)
  • 175°C operating temperature
  • High avalanche capability

Description

  • High power density
  • By far industry’s lowest RDS(on)
  • High ID for high-power applications
  • High switching performance

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