Product
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IAUTN08S5N012L
  • IAUTN08S5N012L

IAUTN08S5N012L

Active and preferred

Infineon Technologies IAUTN08S5N012L Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany

ID (@25°C) max

300 A

Launch year

2024

Operating Temperature range

-55 °C to 175 °C

Package

PG-HSOF-8-2

Planned to be available until at least

2038

Polarity

N

QG (typ @10V) max

24 nC, 231 nC

QG (typ @10V)

19 nC, 178 nC

Qualification

Automotive

RDS (on) (@10V) max

9 mΩ, 1.15 mΩ

Technology

OptiMOS™5

VDS max

80 V

VGS(th) range

2.5 V to 3.3 V

VGS(th)

2.9 V

Features

  • Two MOSFET types in one package
  • Linear FET and low RDS(on) FET types
  • LINFET to switch slow, limit current
  • ONFET to limit steady-state losses
  • LINFET has enhanced SOA
  • Tight VGS(th) ranges, good to parallel
  • Dedicated gate pins for each MOSFET
  • Common MOSFET source and drain pins
  • AEC-Q101 Qualified & PPAP Capable
  • Enhanced electrical testing
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature

Description

  • Best of two MOSFET types in one part
  • Independent control of each MOSFET
  • Minimize EMI by slow switching
  • Limit in-rush current
  • Clamp for over-voltage protection
  • Minimize conduction losses with ONFET
  • High linear mode current at high VDS
  • Possible to replace 2 FETs, save cost
  • Proven rugged OptiMOS™ 5 and TOLL
  • Designed for Automotive robustness
  • High quality production for Automotive

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