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IAUCN08S7N024T
  • IAUCN08S7N024T

IAUCN08S7N024T

Active and preferred

IAUCN08S7N024T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD package. The SSO10T package helps customers achieve big advancements in cooling and power density. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applications.

Infineon Technologies IAUCN08S7N024T Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

165 A

Launch year

2025

Operating Temperature range

-55 °C to 175 °C

Package

PG-LHDSO-10

Planned to be available until at least

2040

Polarity

N

QG (typ @10V) max

71 nC

QG (typ @10V)

54 nC

Qualification

Automotive

RDS (on) (@10V) max

2.44 mΩ

Technology

OptiMOS™7

VDS max

80 V

VGS(th) range

2.3 V to 3.2 V

VGS(th)

2.8 V

Features

  • Direct cooling path to ECU housing
  • Virtually no heat flows into PCB
  • Industry’s largest exposed pad area
  • Freedom to route traces under package
  • Can mount parts on back side of PCB
  • Leading edge on-resistance, RDS(on)
  • Fast switching times (turn on/off)
  • Tight threshold voltage, VGS(th), range
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Package is listed with JEDEC

Description

  • Enables excellent thermal management
  • Thermal impedance improved 20% to 50%
  • Thermal resistance improved 20% to 50%
  • Helps reduce ECU volume or PCB area
  • Helps reduce PCB cost (area, Cu, vias)
  • Reduces PCB and system design effort
  • Helps achieve highest power density
  • Reduces conduction losses
  • Superior switching performance
  • Well-suited for parallel placement
  • Quality and robustness for automotive
  • Potential for second source supplier

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