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IAUCN04S7N040D
  • IAUCN04S7N040D

IAUCN04S7N040D

Active and preferred

Infineon Technologies IAUCN04S7N040D Product Info

16 April 2026 1

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

60 A

Launch year

2024

Operating Temperature range

-55 °C to 175 °C

Package

PG-TDSON-8

Planned to be available until at least

2038

Polarity

N+N

QG (typ @10V) max

17 nC

QG (typ @10V)

13 nC

Qualification

Automotive

RDS (on) (@10V) max

4.04 mΩ

Technology

OptiMOS™7

VDS max

40 V

VGS(th) range

2.2 V to 3 V

VGS(th)

2.6 V

Features

  • OptiMOS™ 7 40 V power MOSFET
  • N-channel MOSFET-Enhancement mode-Normal Level
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Robust design
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

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