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IAUAN04S7N006
  • IAUAN04S7N006

IAUAN04S7N006

Active and preferred

Infineon Technologies IAUAN04S7N006 Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Indonesia, Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

250 A

Launch year

2024

Operating Temperature range

-55 °C to 175 °C

Package

PG-HSOF-5

Planned to be available until at least

2038

Polarity

N

QG (typ @10V)

94 nC

QG (typ @10V) max

123 nC

Qualification

Automotive

RDS (on) (@10V) max

0.57 mΩ

Technology

OptiMOS™7

VDS max

40 V

VGS(th) range

2.2 V to 3 V

VGS(th)

2.6 V

Features

  • OptiMOS™ 7 40 V power MOSFET
  • N-channel-Enhancement mode-Normal Level
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Robust design
  • MSL2a up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Very low Ron*A
  • High avalanche capability
  • Small gate charges
  • Fast switching times (turns on/off)
  • High power efficiency
  • Increased design ruggedness
  • Optimized switching performance
  • Small footprint & efficient cooling
  • High quality product design
  • High quality FE&BE production

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