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CYPT15B102N-GGMB
  • CYPT15B102N-GGMB

CYPT15B102N-GGMB

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Our rad hard F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications. For flight devices, order DLAM QML-V part 5962R2321301VXC

Infineon Technologies CYPT15B102N-GGMB Product Info

16 April 2026 0

Parameters

Density

2 MBit

Device weight

1716.9 mg

Family

F-RAM

Inductance

Parallel

Lead Ball Finish

Au

Operating Temperature range

-55 °C to 125 °C

Operating Voltage range

2 V to 3.6 V

Organization (X x Y)

128Kx16

Peak Reflow Temp

260 °C

Planned to be available until at least

2033

Qualification

Military

Features

  • 2 Mb density, (128K x 16)
  • 10-trillion read/write cycles
  • 120 years data retention at +85°C
  • Low programming voltage (2V)
  • 2.0 V–3.6 V operating range
  • Low operating current (20 mA max)
  • –55°C to +125°C military grade
  • 44-pin ceramic TSOP (CTSOP)
  • Prototype for flight devices

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