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FF750R17ME7DP_B11
  • FF750R17ME7DP_B11

FF750R17ME7DP_B11

Active and preferred

EconoDUAL™ 3 1700 V, 750 A half-bridge TRENCHSTOP™ IGBT7 module with enlarged emitter controlled 7 diode, NTC, PressFIT contact technology and pre-applied Thermal Interface Material.

Infineon Technologies FF750R17ME7DP_B11 Product Info

16 April 2026 0

Parameters

Configuration

half-bridge

Dimensions (width)

62 mm

Dimensions (length)

152 mm

Features

TIM, Enlarged Diode, PressFIT

Housing

EconoDUAL™ 3

IC(nom) / IF(nom)

750 A

IC max

750 A

Qualification

Industrial

Technology

IGBT7 - E7

VCE(sat) (Tvj=25°C typ)

1.7 V

VCES / VRRM

1700 V

VF (Tvj=25°C typ)

2.35 V

Voltage Class max

1700 V

Apps

Power transmission and distribution, Wind power, Motor control

Features

  • Low VCE,sat
  • Enlarged diode
  • Reduced VF and RthJC of the diode
  • Tvj op = 175 °C overload
  • Optimized switching losses
  • Enhanced controllability of dv/dt
  • Improved diode softness and Erec
  • Enhanced comic ray robustness
  • PressFIT control pins
  • Screw power terminals
  • Integrated NTC temperature sensor
  • Pre-applied Thermal Interface Material

Description

  • Increased power density
  • Avoidance of paralleling of IGBT modules
  • Reduced system costs
  • Simplification of the inverter systems
  • Easy and most reliable assembly

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