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F4-8MR12W2M1H_B70
  • F4-8MR12W2M1H_B70

F4-8MR12W2M1H_B70

Active and preferred

EasyPACK™ 2B CoolSiC™ MOSFET fourpack module 1200 V, 8 mΩ G1 with NTC, PressFIT contact technology and aluminium nitride ceramic.

Infineon Technologies F4-8MR12W2M1H_B70 Product Info

16 April 2026 11

Parameters

Applications

UPS, SST, EV Charger, Solar, ESS

Configuration

Fourpack

Dimensions (width)

48 mm

Dimensions (length)

62.8 mm

Features

PressFIT

Housing

Easy 2B

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

8.1 mΩ

Apps

Battery energy storage (BESS), EV charging, Photovoltaic, Uninterruptible power supplies (UPS)

Features

  • Best-in-class packages with 12 mm height
  • Leading edge WBG material
  • Very low module stray inductance
  • Enhanced CoolSiC™ MOSFET Gen 1
  • Enlarged gate drive voltage window
  • Gate-source voltages of +23 V and -10 V
  • Tvjop under overload condition up to 175°C
  • PressFIT pins
  • Integrated NTC temperature sensor

Description

  • Outstanding module efficiency
  • System cost advantages
  • System efficiency improvement
  • Reduced cooling requirements
  • Enabling higher frequency
  • Increase of power density

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