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F3L11MR12W2M1HP_B19
  • F3L11MR12W2M1HP_B19

F3L11MR12W2M1HP_B19

Active and preferred

EasyPACK™ 2B CoolSiC™ MOSFET 3-level module in NPC2 topology 1200 V, 11mΩ G1 with NTC, pre-applied thermal interface material (TIM) and PressFIT contact technology.

Infineon Technologies F3L11MR12W2M1HP_B19 Product Info

16 April 2026 0

Parameters

Applications

UPS, Solar, EV Charger, ESS

Configuration

Sixpack

Dimensions (length)

62.8 mm

Dimensions (width)

48 mm

Features

PressFIT, TIM

Housing

Easy 2B

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

10.8 mΩ

Apps

Battery energy storage (BESS), EV charging, Photovoltaic, Uninterruptible power supplies (UPS)

Features

  • Best-in-class packages with 12 mm height
  • Leading edge WBG material
  • Very low module stray inductance
  • Enhanced CoolSiC™ MOSFET Gen 1
  • Enlarged gate drive voltage window
  • Gate-source voltages of +23 V and -10 V
  • Tvjop under overload condition up to 175°C
  • PressFIT pins
  • Integrated NTC temperature sensor
  • Thermal Interface Material (TIM)

Description

  • Outstanding module efficiency
  • System cost advantages
  • System efficiency improvement
  • Reduced cooling requirements
  • Enabling higher frequency
  • Increase of power density

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