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ESD112-B1-02EL
  • ESD112-B1-02EL

ESD112-B1-02EL

Bi-directional Ultra-low Capacitance ESD/Transient Protection Diode

Infineon Technologies ESD112-B1-02EL Product Info

16 April 2026 0

Parameters

CL max

0.4 pF

CL

0.23 pF

Green

RoHS compliant, Halogen free

IEFT

40 A

IPP

3 A

IR max

50 nA

IR

1 nA

Protected Lines

1

Rdyn (reverse)

1 Ω

Rdyn (forward)

1 Ω

Vcl typ. reverse (TLP 30A)

38V

Vcl typ. reverse (TLP 16A)

29V

Vcl typ. reverse (@16A)

29 V

VESD range

-20 kV to 20 kV

VWM range

-5.3 V to 5.3 V

Description

  • ESD / transient protection of RF signal lines according to:
    • IEC61000-4-2 (ESD): ±25 kV (air/contact)
    • IEC61000-4-4 (EFT): 40 A (5/50 ns)
    • IEC61000-4-5 (surge): 3 A (8/20 μs)
  • Maximum working voltage: VRWM ±5.3 V
  • Extremely low capacitance: CL = 0.2 pF (typical)
  • Low clamping voltage: VCL = 29 V at IPP = 16 A (typical)
  • Very low reverse current IR < 1 nA typ.
  • Very small form factor down to 0.62 x 0.32 x 0.31 mm3
  • Pb-free (RoHS compliant) and halogen free package

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