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IMZA65R057M1H
  • IMZA65R057M1H

IMZA65R057M1H

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. This 650V CoolSiC™ is built on a state-of-the-art trench MOSFET, optimized to allow no compromises in getting both the lowest switching losses for given on-state resistance in the application and the highest reliability in operation.

Infineon Technologies IMZA65R057M1H Product Info

16 April 2026 1

Parameters

ID (@25°C) max

85 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO247 4-pin (asymmetric leads)

Polarity

N

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

74 mΩ

RDS (on) (@ Tj = 25°C)

57 mΩ

Technology

CoolSiC™ G1

VDS max

650 V

Apps

Medium voltage IBC (48 V), Edge computing, Telecommunications infrastructure, 1-phase string inverter solutions, Industrial robots

Features

  • 1st generation CoolSiC™
  • low gate charge
  • low stored energy in COSS
  • negligable Qrr
  • flat COSS
  • flat RDS(on) over temperature

Description

  • higher efficiency in hard switching
  • higher efficiency in soft switching
  • hard commutation on body diode
  • high reliability
  • Kelvin source
  • Kelvin source
  • increased creepage

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