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DD1000S33HE3
  • DD1000S33HE3

DD1000S33HE3

Active and preferred

IHV B 3300V , 1000 A 130mm Diode IGBT Module with EC3 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT3 products.

Infineon Technologies DD1000S33HE3 Product Info

16 April 2026 0

Parameters

Configuration

Diodes

Dimensions (length)

130 mm

Dimensions (width)

140 mm

Housing

IHV B

IC(nom) / IF(nom)

1000 A

IC max

1000 A

Qualification

Industrial, Traction

Technology

Diode

VCES / VRRM

3300 V

VF (Tvj=25°C typ)

3.1 V

Voltage Class max

3300 V

Apps

Medium voltage (MV) drive, Traction, Wind power, Motor control, Uninterruptible power supplies (UPS)

Features

  • High DC stability
  • Decades of field experience
  • High surge current capability
  • Tvj op=150°C
  • AlSiC base plate with AlN substrate
  • Package with CTI > 600
  • Fire & smoke EN45545 R22, R23 : HL3
  • Low recovery losses
  • Isolated base plate
  • Dual Diode

Description

  • Standardized housing: 130x140x38 mm
  • decades of field experience
  • Long service life
  • Tough against overloads & faults
  • Low FIT Rate
  • UL recognized

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