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CY62147G30-45BVXI
  • CY62147G30-45BVXI

CY62147G30-45BVXI

Active and preferred

The CY62147G30-45BVXI is a 4-Mbit (256K × 16-bit) high-performance CMOS static RAM with embedded ECC for single-bit error correction, ensuring reliable data integrity in industrial applications. Operating from 2.2 V to 3.6 V with a fast 45 ns access time, it features ultra-low standby current down to 3.5 μA, 1.0-V data retention, and TTL-compatible I/O.

Infineon Technologies CY62147G30-45BVXI Product Info

16 April 2026 0

Parameters

Density

4 MBit

Family

MoBL™ SRAM

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.2 V to 3.6 V

Organization (X x Y)

256K x 16

Peak Reflow Temp

260 °C

Planned to be available until at least

2033

Qualification

Industrial

Features

  • 4-Mbit (256K × 16) SRAM with ECC
  • 45 ns access time
  • 2.2 V–3.6 V supply voltage range
  • Ultra-low standby current: 3.5 μA typ, 8.7 μA
  • 15 mA typ active current at 22.22 MHz
  • Embedded single-bit error correction
  • TTL-compatible I/O
  • Byte power-down feature
  • Industrial temperature range: –40°C to 85°C
  • Single chip enable operation

Description

  • ECC improves data reliability
  • 45 ns speed enables fast memory access
  • Wide voltage range supports flexible designs
  • Low standby current extends battery life
  • Low active current reduces power usage
  • Error correction prevents data loss
  • TTL I/O simplifies system integration
  • Byte power-down saves power in idle
  • Operates reliably in harsh environments
  • Simple chip enable eases control logic

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