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IPB80N06S2L-06
  • IPB80N06S2L-06

IPB80N06S2L-06

Active and preferred

Infineon Technologies IPB80N06S2L-06 Product Info

16 April 2026 1

Parameters

Budgetary Price €/1k

1.12

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Malaysia

ID (@25°C) max

80 A

IDpuls max

320 A

Launch year

2006

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (PG-TO263-3)

Planned to be available until at least

2033

Polarity

N

Ptot max

250 W

QG (typ @10V) max

150 nC

QG (typ @10V)

114 nC

Qualification

Automotive

RDS (on) (@10V) max

6 mΩ

RthJC max

0.6 K/W

Technology

OptiMOS™

VDS max

55 V

VGS(th) range

1.2 V to 2 V

VGS(th)

1.6 V

Features

  • N-Channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (lead free)
  • Ultra low RDS(on)
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Lowest RDS(on) at 55V in planar tech
  • Highest current capability
  • Lowest switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimized total gate charge
  • Smaller driver output stages

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