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CY14V101NA-BA45XIT
  • CY14V101NA-BA45XIT

CY14V101NA-BA45XIT

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CY14V101NA-BA45XIT is a 1 Mbit (64 K × 16) parallel nvSRAM combining SRAM with QuantumTrap nonvolatile storage for data retention through power loss. It supports 45 ns access, hands-off AutoStore on power-down using a 61–180 µF VCAP capacitor, and RECALL on power-up or by software. Rated for 20-year retention and 1,000 K STORE cycles, VCC 3.0–3.6 V and VCCQ 1.65–1.95 V, −40 to 85°C, 48-ball FBGA.

Infineon Technologies CY14V101NA-BA45XIT Product Info

16 April 2026 0

Parameters

Density

1 MBit

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Organization (X x Y)

64K x 16

Peak Reflow Temp

260 °C

Planned to be available until at least

2033

Qualification

Industrial

Features

  • 1-Mbit nvSRAM (128Kx8/64Kx16)
  • 25 ns and 45 ns access times
  • AutoStore on power-down (VCAP)
  • STORE via HSB pin or software
  • RECALL via power-up or software
  • 20-year data retention
  • 1M STORE cycles (QuantumTrap)
  • Infinite SRAM R/W and RECALL
  • Core VCC 3.0 V to 3.6 V
  • I/O VCCQ 1.65 V to 1.95 V
  • Standby current ISB max 8 mA
  • Input leakage IIX max ±1 µA

Description

  • SRAM-like fast random access
  • Auto backup at power loss
  • Avoids battery-backed SRAM
  • Manual STORE for checkpoints
  • Restores state after power returns
  • Keeps data for 20-year shelf life
  • Endures frequent nonvolatile saves
  • No wear-out in normal SRAM use
  • Fits standard 3.3 V core rails
  • Interfaces to 1.8 V logic levels
  • Lower idle power in standby
  • Low leakage reduces bus loading

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