0
CY14U256LA-BA35XIT
  • CY14U256LA-BA35XIT

CY14U256LA-BA35XIT

Active and preferred

CY14U256LA-BA35XIT is a 256-Kbit (32 K × 8) parallel nvSRAM combining fast SRAM with QuantumTrap nonvolatile storage. It supports 35 ns access and hands-off AutoStore on power-down using a VCAP capacitor (120 µF to 180 µF), with RECALL on power-up or by software/HSB pin. Rated for 1 million STORE cycles and 20-year retention. Operates at VCC 2.7 V to 3.6 V and VCCQ 1.65 V to 1.95 V over -40 to 85°C in a 48-ball FBGA.

Infineon Technologies CY14U256LA-BA35XIT Product Info

16 April 2026 0

Parameters

Density

256 kBit

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Organization (X x Y)

32K x 8

Peak Reflow Temp

260 °C

Planned to be available until at least

2033

Qualification

Industrial

Features

  • 32K × 8 fast SRAM + nonvolatile
  • 35 ns SRAM access time
  • AutoStore on power-down (VCAP)
  • VCAP capacitor 120–180 µF
  • STORE via AutoStore, pin, software
  • RECALL on power-up or software
  • HSB open-drain busy indicator
  • Write/STORE inhibit at low VCC
  • I/O disabled when VCCQ too low
  • VCC 2.7–3.6 V supply
  • VCCQ 1.65–1.95 V I/O supply
  • 20-year retention, 1,000K STORE

Description

  • Keeps data through power loss
  • 35 ns SRAM cuts wait states
  • AutoStore needs no firmware action
  • VCAP enables simple power-fail save
  • Pin or SW STORE fits many designs
  • Fast restore on every power-up
  • HSB busy flag avoids collisions
  • Low-VCC inhibit prevents corruption
  • I/O-off blocks brownout writes
  • Core supply supports 3.3 V rails
  • Low-voltage I/O matches MPUs
  • Long life for frequent data saves

Subscribe to Welllinkchips !
Your Name
* Email
Submit a request