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CY14E116L-ZS25XI
  • CY14E116L-ZS25XI

CY14E116L-ZS25XI

CY14E116L-ZS25XI is a 16-Mbit nvSRAM (2048K × 8) that combines fast SRAM with QuantumTrap nonvolatile storage in each cell. It runs from 4.5 V to 5.5 V and performs hands-off AutoStore on power-down using an external VCAP capacitor (19.8–82.0 µF), with RECALL on power-up or by software. Industrial -40 to 85°C, 25 ns access, 44-pin TSOP II, with 1M STORE cycles and 20-year retention.

Infineon Technologies CY14E116L-ZS25XI Product Info

16 April 2026 0

Parameters

Density

16384 kBit

Interfaces

Parallel

Lead Ball Finish

Pure Sn

Operating Temperature range

-40 °C to 85 °C

Operating Voltage (VCCQ) max

3.6 V

Operating Voltage range

4.5 V to 5.5 V

Organization (X x Y)

2Mb x 8

Peak Reflow Temp

260 °C

Qualification

Industrial

Speed

25 ns

Features

  • 16-Mbit nvSRAM, SRAM interface
  • AutoStore on power-down via VCAP
  • STORE via software or HSB pin
  • RECALL via software or power-up
  • QuantumTrap nonvolatile cell tech
  • 1M STORE cycles to QuantumTrap
  • 20-year data retention
  • Infinite SRAM R/W/RECALL cycles
  • Sleep mode current 10 µA max
  • Power-up RECALL duration 30 ms
  • STORE cycle duration 8 ms
  • VCAP capacitor 19.8 µF to 82 µF

Description

  • Retains data through power loss
  • No battery needed for retention
  • Flexible save/restore control
  • Fast restart after power returns
  • High endurance for frequent saves
  • No wear-out from SRAM writes
  • Long service life for stored data
  • Sleep cuts idle power drain
  • 10 µA sleep suits low-power systems
  • Predictable shutdown save time
  • Simple hold-up cap eases design
  • Blocks access during STORE/RECALL

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