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IQFH61N06NM5
  • IQFH61N06NM5

IQFH61N06NM5

Active and preferred

This 60 V normal-level power MOSFET comes in our latest innovative, compact clip-based PQFN 8x6 mm² package enabling very high current and power levels. The part offers ultra-low RDS(on) of 0.68 mΩ combined with outstanding thermal performance. This enables higher system efficiency and power density for a large variety of end applications like battery-powered applications, battery management, low-voltage drives and SMPS.

Infineon Technologies IQFH61N06NM5 Product Info

16 April 2026 0

Parameters

ID (@25°C) max

510 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 8x6

Polarity

N

QG (typ @10V)

190 nC

RDS (on) (@10V) max

0.61 mΩ

VDS max

60 V

VGS(th) range

2.1 V to 3.3 V

VGS(th)

2.8 V

Apps

Light electric vehicle solutions, E-bike solutions, Multicopters and drones, Power tools, Robotics, Battery management systems (BMS)

Features

  • Cutting edge OptiMOS™ silicon technology
  • Outstanding FOMs
  • High chip/package ratio
  • Optimized lead-frame and Cu-Clip design
  • Internally connected Q1/Q2 MOSFETs
  • Compact and simplified layout design
  • Dual-side cooling

Description

  • Minimized conduction losses
  • High power capability
  • Superior device performance
  • Reduced voltage overshoot
  • Superior thermal performance
  • Re-use board for multiple power levels
  • Superior switching performance/EMI

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