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CY14B108L-BA45XIT
  • CY14B108L-BA45XIT

CY14B108L-BA45XIT

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CY14B108L-BA45XIT is an 8-Mbit nvSRAM (1024 K × 8) combining fast SRAM with QuantumTrap nonvolatile storage. It operates from 2.7 V to 3.6 V over -40°C to 85°C and supports 45 ns access time in a 48-ball FBGA. Data is automatically STORED on power-down using an external 122 µF to 360 µF VCAP capacitor and RECALLED on power-up, with software- or pin-initiated STORE/RECALL. Data retention is 20 years.

Infineon Technologies CY14B108L-BA45XIT Product Info

16 April 2026 0

Parameters

Density

8 MBit

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage (VCCQ) max

3.6 V

Operating Voltage range

2.7 V to 3.6 V

Organization (X x Y)

1Mb x 8

Peak Reflow Temp

260 °C

Qualification

Industrial

Speed

45 ns

Apps

Edge computing

Features

  • 8-Mbit nvSRAM with SRAM interface
  • Fast access time down to 20 ns
  • AutoStore on power-down
  • STORE via software or HSB pin
  • RECALL via software or power-up
  • QuantumTrap nonvolatile cells
  • 20-year data retention
  • 1,000K STORE endurance
  • Single 3 V supply: 2.7 V to 3.6 V
  • VCAP capacitor: 122 uF to 360 uF
  • Read/write inhibited below 2.65 V
  • Power-up RECALL duration 20 ms

Description

  • SRAM-like speed with no battery
  • 20 ns cuts memory access latency
  • Saves data automatically at shutdown
  • Flexible backup: SW or HSB control
  • Fast restore after power returns
  • High reliability QuantumTrap backup
  • Long data hold without refresh
  • Endures frequent power events
  • Simple 3 V rail reduces regulators
  • Small cap enables simple backup HW
  • Prevents corruption on brownout
  • 20 ms RECALL speeds system boot

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