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CY14B104NA-BA20XI
  • CY14B104NA-BA20XI

CY14B104NA-BA20XI

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CY14B104NA-BA20XI is a 4-Mbit (256K × 16) parallel nvSRAM combining fast SRAM with QuantumTrap nonvolatile storage. It operates from a single 2.7 V to 3.6 V supply over −40°C to 85°C, with 20 ns access time. Data is automatically STORED on power-down using a small VCAP capacitor and RECALLED on power-up; STORE/RECALL can also be initiated by pin or software, enabling nonvolatile buffering for embedded data log and configuration.

Infineon Technologies CY14B104NA-BA20XI Product Info

16 April 2026 0

Parameters

Density

4 MBit

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Organization (X x Y)

256K x 16

Peak Reflow Temp

260 °C

Planned to be available until at least

2033

Qualification

Industrial

Features

  • 4-Mbit nvSRAM, SRAM interface
  • AutoStore on power-down
  • RECALL on power-up or by software
  • STORE by software or hardware pin
  • QuantumTrap nonvolatile elements
  • 2.7 V to 3.6 V single-supply
  • -40°C to +85°C operating temp
  • 20-year data retention
  • 1,000 K nonvolatile STORE ops
  • VCAP external cap 61–180 µF
  • VSWITCH low-V trigger 2.65 V
  • STORE duration tSTORE max 8 ms

Description

  • Instant SRAM-like access
  • No firmware for power-fail save
  • Fast restore after power returns
  • Flexible save control options
  • High NVM reliability vs EEPROM
  • Fits regulated 3 V rails
  • Stable operation in harsh temps
  • Long retention protects configs
  • Endurance supports frequent saves
  • Backupless save with small cap
  • Predictable brownout save trigger
  • Short STORE time limits downtime

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