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BTT3018EJ
  • BTT3018EJ

BTT3018EJ

Active and preferred

The power transistor is built by a N-channel vertical power MOSFET. The BTT3018EJ is monolithically integrated.The BTT3018EJ is automotive qualified and is optimized for 24 V automotive applications.

Infineon Technologies BTT3018EJ Product Info

16 April 2026 0

Parameters

Certifications

ISO 26262-ready

Channels

1

Classification

ISO 26262-ready

Control Interface

Discrete

Diagnostic Features

Output Status

Diagnostics

Digital

EAS/Avalanche Energy

150 mJ

EAS (Energy capability)

150 mJ

Family

HITFET™ + 24V

ID max

7 A

IL(LIM) min

30 A

IL(nom)

7 A

IL (Short Circuit Current)

30 A

Load Current

7 A

Mounting

SMT

Nominal Load Current per channel

7 A

Operating Temperature range

-40 °C to 150 °C

Planned to be available until at least

2039

Protection strategy

Latch

RDS (on) (@ Tj = 150°C) max

38 mΩ

RDS (on) (@ Tj = 25°C)

16 mΩ

Recommended Operating Voltage max

63 V

toff (Turn OFF time) max

8 µs

ton (Turn ON time) max

10 µs

VDS max

63 V

Apps

Automotive, Domain controller for ADAS & autonomous driving, Automotive body control module (BCM), Chassis control & safety

Features

  • Single channel device optimized for 24 V
  • Electrostatic discharge protection (ESD)
  • Overcurrent/-temp protection, clamping
  • Over temperature latch shutdown
  • Supply pin undervoltage protection
  • Dedicated status signal
  • Slew-rate control
  • PWM: 20kHz, 10%-90% duty cycle
  • Green Product (RoHS compliant)
  • AEC Qualified

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