0
BSZ215C H
  • BSZ215C H

BSZ215C H

Active and preferred

Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon’s famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Infineon Technologies BSZ215C H Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.46

Ciss

315 pF, 300 pF

Coss

92 pF, 114 pF

ID (@25°C) max

3.2 A, 5.1 A

IDpuls max

20 A, -13 A

Mode

Enhancement

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3 x 3.3

Pin Count

8 Pins

Polarity

N+P

Ptot max

2.5 W

QG (typ @4.5V) max

3 nC

RDS (on) (@4.5V) max

55 mΩ, 150 mΩ

RthJA max

60 K/W

RthJC max

8 K/W

Special Features

LTI (Lead Tip Inspection)

VDS max

-20 V, 20 V

VGS(th) range

-1.4 V to -0.7 V, 0.8 V to 1.4 V

Apps

Automotive, Domain controller for ADAS & autonomous driving, Electric vehicle drivetrain system

Features

  • Complementary P + N channel
  • Enhancement mode
  • Avalanche rated
  • Qualified according to AEC Q101
  • 100% lead-free; RoHS compliant

Subscribe to Welllinkchips !
Your Name
* Email
Submit a request