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S70FL01GSAGMFI011
  • S70FL01GSAGMFI011

S70FL01GSAGMFI011

Active and preferred

The S70FL01GSAGMFI011 is a 1 Gbit (128 Mbyte) automotive-grade SPI NOR Flash memory using a dual-die stack of S25FL512S, based on Infineon 65 nm MirrorBit technology. It operates from 2.7 V to 3.6 V and supports SPI Multi-I/O, Quad and DDR modes up to 133 MHz. With uniform 256-kB sectors, 100,000 program-erase cycles, and 20-year data retention, it is AEC-Q100 Grade 1 qualified for -40°C to +125°C operation, ideal for demanding automotive environments.

Infineon Technologies S70FL01GSAGMFI011 Product Info

16 April 2026 0

Parameters

Density

1 GBit

Family

FL-S

Interface Bandwidth

52 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / -

Interfaces

Quad SPI

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • Dual-die stack architecture
  • SPI Multi-I/O interface
  • Supports DDR and SDR modes
  • 32-bit extended addressing
  • Page programming buffer: 512 bytes
  • Uniform 256 KB sectors
  • 100,000 program-erase cycles min
  • 20-year data retention min
  • One Time Program (OTP) 2048 bytes
  • Block protection with advanced sector
  • Core voltage: 2.7 V to 3.6 V
  • I/O voltage: 1.65 V to 3.6 V

Description

  • Enables 1 Gbit high-density storage
  • Flexible interface for various controllers
  • High-speed data transfer with DDR
  • Large address space for big data
  • Fast programming for efficient updates
  • Simplifies memory management
  • Reliable for frequent rewriting
  • Long-term data reliability
  • Secure storage for sensitive data
  • Prevents accidental data changes
  • Compatible with 3 V systems
  • Flexible I/O for system integration

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