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BSZ096N10LS5
  • BSZ096N10LS5

BSZ096N10LS5

Active and preferred

Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Infineon Technologies BSZ096N10LS5 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.54

Ciss

1600 pF

Coss

250 pF

ID (@25°C) max

62 A

IDpuls max

248 A

Mounting

SMD

Operating Temperature range

-55 °C to 150 °C

Package

PQFN 3.3 x 3.3

Pin Count

8 Pins

Polarity

N

Ptot max

69 W

Qgd

4.1 nC

QG (typ @10V)

22 nC

QG (typ @4.5V)

12 nC

RDS (on) (@10V) max

9.6 mΩ

RDS (on) (@4.5V) max

13.5 mΩ

RDS (on) (@4.5V LL) max

13.5 mΩ

RthJA max

62 K/W

RthJC max

1.8 K/W

Rth max

1.8 K/W

Special Features

Logic Level

VDS max

100 V

VGS(th) range

1.1 V to 2.3 V

VGS(th)

1.7 V

Features

  • Low R DS(on) in small package
  • Low gate charge
  • Lower output charge
  • Logic level compatibility

Description

  • Higher power density designs
  • Higher switching frequency
  • Reduced parts count
  • Driven directly from microcontrollers
  • System cost reduction

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