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BSC0910NDI
  • BSC0910NDI

BSC0910NDI

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With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Infineon Technologies BSC0910NDI Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.71

Ciss

3400 pF, 760 pF

Coss

1700 pF, 370 pF

ID (@25°C) max

11 A, 22 A

IDpuls max

160 A

Operating Temperature range

-55 °C to 150 °C

Package

Asymmetrical Dual 5x6

Polarity

N+N

Ptot max

2.5 W, 2.5 W

QG (typ @4.5V)

5 nC, 23 nC

RDS (on) (@4.5V LL) max

5.9 mΩ, 1.6 mΩ

RDS (on) (@4.5V) max

5.9 mΩ, 1.6 mΩ

RDS (on) (@10V) max

1.2 mΩ, 4.6 mΩ

Rth

1.5 K/W, 4.5 K/W

Special Features

Logic Level, Monolithically Integrated Schottky-like Diode

VDS max

25 V, 25 V

VGS(th) range

0.8 V to 2 V, 1 V to 1 V

Apps

Edge computing

Description

  • Save overall system costs by reducing the number of phases in multiphase converters
  • Reduce power losses and increase efficiency for all load conditions
  • Save space with smallest packages like CanPAK™, S3O8 or system in package solution
  • Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in

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