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BSC080N12LS G
  • BSC080N12LS G

BSC080N12LS G

OptiMOS™ 3 power MOSFETs in logic level are highly suitable for charging , adapter and telecom applications. The devices' low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.

Infineon Technologies BSC080N12LS G Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.07

ID (@25°C) max

99 A

IDpuls max

394 A

Mounting

SMT

Operating Temperature range

-55 °C to 150 °C

Package

SuperSO8 5x6

Polarity

N

Ptot max

156 W

QG (typ @10V)

79 nC

RDS (on) (@10V) max

8 mΩ

RDS (on) (@4.5V) max

9.5 mΩ

VDS max

120 V

VGS(th) range

1.2 V to 2.4 V

VGS(th)

1.85 V

Apps

On-board charging (OBC), Power conversion

Features

  • Low RDS(on) in small package
  • Low gate charge
  • Lower output charge
  • Logic level compatibility

Description

  • Higher power density designs
  • Higher switching frequency
  • Reduced part count with 5V supplies
  • Driven directly from microcontrollers
System cost reduction

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