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BGSX24M2U16
  • BGSX24M2U16

BGSX24M2U16

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The BGSX24M2U16 RF CMOS switch is specifically designed for LTE and 5G antenna applications. This Dual Pole Four Throw (DP4T) cross-switch offers low insertion loss and low harmonic generation. The switch is controlled via a MIPI RFFE control interface. The on-chip controller permits very low power-supply voltage from 1.1 to 1.3 V or the standard supply voltage from 1.65 to 1.95V. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The device has a very small size of only 2.0 mm x 2.0 mm and a thickness of 0.6 mm.

Infineon Technologies BGSX24M2U16 Product Info

16 April 2026 0

Parameters

Control Interface

MIPI 2.1

Frequency Range

0.4 – 7.125 GHz

Insertion Loss (@1GHz)

0.43 dB

Isolation (@1GHz)

47 dB

Pmax

39 dBm

Size

2.0 x 2.0 mm²

Supply Voltage range

1.65 V to 1.95 V

Switch Type

DP4T

Features

  • High linearity up to 39 dBm input power
  • Fast switching time (max 2 µs) for 5G SRS applications
  • Low insertion loss and high port-to-port isolation up to 7.125 GHz
  • Fully compatible with MIPI 2.1 RFFE standard with 4 USIDs
  • Low current consumption
  • 1.2 V / 1.8 V VIO support
  • Software and hardware programmable USID
  • Ultra low profile lead-less plastic package (MSL-1, 260 °C per IPC/JEDEC J-STD-20)

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