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BGA5M1BN6
  • BGA5M1BN6

BGA5M1BN6

The BGA5M1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2200 MHz. The LNA provides 19.3 dB gain and 0.65 dB noise figure at a current consumption of 9.5mA. In bypass mode the LNA provides an insertion loss of 4.7 dB.The BGA5M1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode). OFF-state can be enabled by powering down VCC.

Infineon Technologies BGA5M1BN6 Product Info

16 April 2026 0

Parameters

Frequency

1805 - 2200 MHz

Gain

19.4 dB

I

2.8 mA

IIP3

-7 dBm

NF

0.65 dB

P-1dB (in)

-16 dBm

VCC operating range

1.5 V to 3.6 V

Apps

Automotive telematics control unit (TCU), Mobile device and smartphone solutions

Features

  • Insertion power gain: 19.3 dB
  • Insertion loss in bypass mode: 4.7 dB
  • Low noise figure: 0.65 dB
  • Low current consumption: 9.5mA
  • Operating frequencies: 1805 - 2200 MHz
  • Multi-state control: bypass- and high gain-mode
  • Supply voltage: 1.5 V to 3.6 V
  • Ultra small TSNP-6-2 and TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm2)
  • B9HF Silicon Germanium technology
  • RF output internally matched to 50 Ohm
  • Low external component count
  • 2kV HBM ESD protection (including AI-pin)
  • Pb-free (RoHS compliant) package

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