Product
0
BGA5L1BN6
  • BGA5L1BN6

BGA5L1BN6

The BGA5L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 600 MHz to 1000 MHz. The LNA provides 18.5 dB gain and 0.7 dB noise figure at a current consumption of 8.2mA. In bypass mode the LNA provides an insertion loss of 2.7 dB.The BGA5L1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (bypass- and high gain-mode). OFF-state can be enabled by powering down VCC.

Infineon Technologies BGA5L1BN6 Product Info

16 April 2026 0

Parameters

Frequency

600 - 1000 MHz

Gain

18.5 dB

I

8.2 mA

IIP3

-7 dBm

NF

0.7 dB

P-1dB (in)

-20 dBm

VCC operating range

1.5 V to 3.6 V

Apps

On-board charging (OBC), Home and building automation

Features

  • Operating frequencies: 600 - 1000 MHz
  • Insertion power gain: 18.5 dB
  • Insertion loss in bypass mode: 2.7 dB
  • Low noise figure: 0.7dB
  • Low current consumption: 8.2mA
  • Multi-state control: bypass- and high gain-mode
  • Ultra small TSNP-6-2 and TSNP-6-10 leadless package
  • RF output internally matched to 50 Ohm
  • Low external component count

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8