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BAT15-04R
  • BAT15-04R

BAT15-04R

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This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04R a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Infineon Technologies BAT15-04R Product Info

16 April 2026 1

Parameters

C @VR=0V

0.26 pF

Configuration

Reverse series pair

IF max

110 mA

VF

0.25 V

VR max

4 V

Apps

Complete system solutions for smart TVs, Home appliances

Features

  • Low inductance Ls = 1.5 nH (typical)
  • Low capacitance C = 0.27 pF (typical) at 1 MHz
  • Industry standard SOT23 package (2.9 mm x 2.4 mm x 1 mm)
  • Pb-free (RoHS compliant)

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