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BAT15-02LS
  • BAT15-02LS

BAT15-02LS

Active and preferred

Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 12 GHz.

Infineon Technologies BAT15-02LS Product Info

16 April 2026 0

Parameters

C @VR=0V

0.2 pF

Configuration

Single

IF max

110 mA

VF max

0.32 V

VF

0.25 V

VR max

4 V

Apps

EV traction inverter

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