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AIMBG120R030M1
  • AIMBG120R030M1

AIMBG120R030M1

Active and preferred

With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Infineon Technologies AIMBG120R030M1 Product Info

16 April 2026 0

Parameters

Ciss

1738 pF

Coss

82 pF

ID (@25°C) max

58 A

Launch year

2023

Operating Temperature range

-55 °C to 175 °C

Package

TO-263-7

Planned to be available until at least

2033

Polarity

N

Ptot (@ TA=25°C) max

230 W

QG

57 nC

Qualification

Automotive

RDS (on) (@ Tj = 25°C)

30 mΩ

RthJC max

0.45 K/W

Technology

CoolSiC™ G1

VDS max

1200 V

VGSS, off

0

VGSS, on

20

Apps

DC-DC converter high-voltage, On-board charging (OBC)

Features

  • One channel / two channel devices can be evaluated
  • One board for the complete family
  • Modularity for fast and easy changing of loads and devices within the PROFET™+ family
  • Easy indication which switch is optimized for a given load
  • Only one power supply needed for start up
  • All logic pins are switchable directly on the board
  • Also compatible with external logic voltage supplies

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