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AIMBG120R010M1
  • AIMBG120R010M1

AIMBG120R010M1

Active and preferred

With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Infineon Technologies AIMBG120R010M1 Product Info

16 April 2026 1

Parameters

Ciss

5703 pF

Coss

268 pF

ID (@25°C) max

205 A

Launch year

2023

Operating Temperature range

-55 °C to 175 °C

Package

TO-263-7

Planned to be available until at least

2033

Polarity

N

Ptot (@ TA=25°C) max

882 W

QG

178 nC

Qualification

Automotive

RDS (on) (@ Tj = 25°C)

8.7 mΩ

RthJC max

0.17 K/W

Technology

CoolSiC™ G1

VDS max

1200 V

VGSS, off

0

VGSS, on

20

Apps

EV traction inverter, On-board charging (OBC), Fuel-cell control unit (FCCU)

Features

  • RDS (on) 3 mΩ typical
  • For 24 V and 48 V power nets
  • Load dump robustness up to 70 V
  • Compatible to cranking pulses
  • Integrated diagnostic functions
  • Integrated protection functions
  • Over-current protection
  • Over-load protection
  • Over-temperature protection
  • Over-power protection
  • Low stand-by current 7 µA
  • AEC-Q100 qualification

Description

  • Reliable power distribution
  • PRO-SIL™ ISO 26262-ready
  • Accurate current sensing
  • Supports long wires
  • Ideal for limited board space
  • Leadless power package

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