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AIKW50N65DF5
  • AIKW50N65DF5

AIKW50N65DF5

Active and preferred

TRENCHSTOP™ 5 AUTO IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications.

Infineon Technologies AIKW50N65DF5 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

2.69

Co-pack diode technology

RAPID1

Eoff (Hard Switching)

0.25 mJ

Eoff (Soft Switching)

0.03 mJ

Eon

0.49 mJ

IC (@ 100°) max

53.5 A

IC (@ 25° ) max

80 A

ICpuls max

150 A

IF max

40 A

IFpuls max

150 A

Irrm

15.5 A

Launch year

2017

Package

PG-TO247-3

Planned to be available until at least

2033

Ptot max

270 W

QGate

108 nC

Qrr

680 nC

Reflow Solderable

No

Switching Frequency

15-120 KHz

td(off)

156 ns

td(on)

21 ns

Technology

IGBT TRENCHSTOP™ 5

tf

6 ns

tr

12 ns

Type

IGBT + Diode

VCE(sat)

1.66 V

VCE max

650 V

VF

1.54 V

Voltage Class max

650 V

Apps

On-board charging (OBC)

Features

  • 650V blocking voltage
  • Max junction temperature 175°C
  • Very low conduction and switching losses
  • Very low junction and case temperature
  • High power density design
  • Positive temp coeff in V CEsat

Description

  • 50V higher blocking voltage
  • Highest efficiency
  • High device reliability
  • Low temp leads to less cooling efforts
  • Less system costs

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