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AIKQB160N75CP2
  • AIKQB160N75CP2

AIKQB160N75CP2

Active and preferred

The AIKQB160N75CP2 discrete IGBT in a 3-Pin TO247PLUS package with 750V EDT2 technology, ideal for high voltage automotive applications supporting up to 470V battery voltages. It enables easy paralleling, system flexibility and power scalability. Upgrading existing designs with AIKQ120N75CP2 to higher power classes with 160A drop-in replacement. By using reflow soldering assembly up to 40% better thermal conductivity are achievable.

Infineon Technologies AIKQB160N75CP2 Product Info

16 April 2026 0

Parameters

Co-pack diode technology

EMCON3

Eon

10.6 mJ

IC (@ 25°) max

200 A

IC (@ 100°) max

160 A

ICpuls max

480 A

IF max

160 A

IFpuls max

480 A

Irrm

35.4 A

Launch year

2024

Package

TO-247PLUS-3

Ptot max

750 W

QGate

975 nC

Qrr

3.5 nC

Reflow Solderable

Yes

Switching Frequency

7kHz - 15kHz

td(off)

279 ns

td(on)

72 ns

Technology

EDT2

tr

101 ns

Type

IGBT + Diode

VCE(sat) max

1.55 V

VCE(sat)

1.4 V

VCE max

750 V

VF

1.8 V

Features

  • Best-in-class 750 V TO247PLUS
  • Suitable for 470 V VDC systems
  • Very low VCEsat
  • Short circuit robust tsc = 3 µs
  • Qualified Reflow device at 260°C
  • Self limiting short-circuit current
  • Very tight parameter distribution
  • Low gate charge QG
  • Resistive weldable pins
  • High creepage distance
  • Product Validation acc. to AEC-Q101

Description

  • Benchmark quality & switching behavior
  • Ideal for automotive requirements
  • Excellent parallel operation
  • High reliability and operating lifetime
  • Low switching losses and cooling effort
  • Various power classes - same package
  • Power scalability and cost optimization
  • High power output by reflow-soldering
  • Low costs per Ampere on system level
  • Low EMI signature
  • Simple gate drive design
  • Drop-in replacement

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